![]() ![]() In 1972, a type of electrically re-programmable non-volatile memory was invented by Fujio Masuoka at Toshiba, who is also known as the inventor of flash memory. Toshiba, Sanyo (later, ON Semiconductor), IBM, Intel, NEC (later, Renesas Electronics), Philips (later, NXP Semiconductors), Siemens (later, Infineon Technologies), Honeywell (later, Atmel), Texas Instruments, Most of the major semiconductor manufactures, such as Studied, invented, and manufactured some electrically re-programmable non-volatile devices until 1977. The theoretical basis of these devices is Avalanche hot-carrier injection. ![]() But in general, programmable memories, including EPROM, of early 1970s had reliability and endurance problems such as the data retention periods and the number of erase/write cycles. ![]() In 1975, NEC's semiconductor operations unit, later NEC Electronics, currently Renesas Electronics, applied the trademark name EEPROMĀ® to Japan Patent Office. ![]() In 1978, this trademark right is granted and registered as No.1,342,184 in Japan, and still survives as of March 2018. In February 1977, Eliyahou Harari at Hughes Aircraft Company invented a new EEPROM technology using Fowler-Nordheim tunnelling through a thin silicon dioxide layer between the floating-gate and the wafer. Hughes went on to produce this new EEPROM devices. ![]()
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